Jonas Gertsch
- Current affiliation: Seagate Technology
Jonas is a Ph.D. candidate in the Chemistry Department at the University of baby直播app at Boulder. He is a member of the Steven George Group in the Chemistry Department and also has a co-advisor, Victor Bright, in the Mechanical Engineering Department. His research is focused on Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE) and their applications for MEMS devices. Jonas received his B.S. in Chemistry and Physics from Wisconsin Lutheran College in Milwaukee, WI in 2012. His undergraduate research focused on ozone for sensor and potable water applications. In his free time he enjoys snowboarding, biking, hiking, volleyball, and hanging out with his dog, Einstein.
Publications:
- Articles:
SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching
Jonas Gertsch 路 Austin Cano 路 Victor Bright 路 Steven George
Submitted to Chemistry of Materials
Electrical and Thermal Conduction in Ultra-thin Freestanding Atomic Layer Deposited W Nanobridges
Nathan T Eigenfeld 路 Jonas C Gertsch 路 George D Skidmore 路 Steven M George 路 Victor M. Bright
Oct 2015 路 Nanoscale
Hemispherical micro-resonators from atomic layer deposition
Jason M Gray 路 John P Houlton 路 Jonas C Gertsch 路 Joseph J Brown 路 Charles T Rogers 路 Steven M George 路 Victor M Bright
Dec 2014 路 Journal of Micromechanics and Microengineering
GaN nanowire coated with atomic layer deposition of tungsten: A probe for near-field scanning microwave microscopy
Joel C Weber 路 Paul T Blanchard 路 Aric W Sanders 路 Jonas C Gertsch 路 Steven M George 路 Samuel Berweger 路 Atif Imtiaz 路 Kevin J Coakley 路 Thomas M Wallis 路 Kris A Bertness 路 Pavel Kabos 路 Norman A Sanford 路 Victor M Bright
Sep 2014 路 Nanotechnology
- Conference Papers:
First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with Sub-5nm Fin-Width Featuring In-Situ ALE-ALD
Wenjie Lu 路 Younghee Lee 路 Jessica Murdzek 路 Jonas Gertsch 路 Alon Vardi 路 Lisa Kong 路 Steven George 路 Jesus del Alamo
Dec 2018 路 Contributed Paper: 2018 IEEE International Electron Devices Meeting (IEDM)
Thermal Atomic Layer Etching of VO2 Using Sequential Exposures of SF4 and Either Sn(acac)2 or BCl3
Jonas Gertsch 路 Victor Bright 路 Steven George
Oct 2017 路 Contributed Oral: AVS 64th International Symposium & Exhibition
SF4 as a New Fluorine Reagent for Thermal ALE: Application to Al2O3 and VO2 ALE
Jonas Gertsch 路 Victor Bright 路 Steven George
July 2017 路 Contributed Poster: ALD/ALE 2017- 17th International Conference on Atomic Layer Deposition
Design, fabrication, and characterization of a micromachined glass-blown spherical resonator with insitu integrated silicon electrodes and ALD tungsten interior coating
Joan Giner 路 Jason M. Gray 路 Jonas Gertsch 路 Victor M. Bright 路 Andrei M. Shkel
Feb 2015 路 Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Effect of Film Stress on the Shape of Nanostructures Grown Using Atomic Layer Deposition
Jonas C Gertsch 路 Nathan Eigenfeld 路 Jason Gray 路 Joseph Brown 路 Victor Bright 路 Steven George
American Vacuum Society International Symposium路 Nov 2014